features ?high output power: p 1db = 39.0dbm (typ.) ?high gain: g 1db = 8.5db (typ.) ?high pae: add = 31% (typ.) ?low im 3 = -45dbc@po = 28.0dbm ?broad band: 5.9 ~ 7.2ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package 1 edition 1.3 august 2004 FLM5972-8F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 42.8 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 ? . description the FLM5972-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3400 5200 - 3400 - -0.5 -1.5 -3.0 -5.0 - - 7.5 8.5 - -31- 38.0 39.0 - v ds = 5v, i ds = 170ma v ds = 5v, i ds = 2200ma v ds = 5v, v gs = 0v i gs = -170 a v ds =10v, i ds = 0.65i dss (typ.), f = 5.9 ~ 7.2 ghz, z s =z l = 50 ohm f = 7.2 ghz, ? f = 10 mhz 2-tone test p out = 28.0dbm s.c.l. ma ms v db % -42 -45 - dbc dbm v g m v p v gso p 1db g 1db drain current - 2200 2600 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 3.0 3.5 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch
2 FLM5972-8F c-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 40 50 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 7.2ghz f 2 = 7.21 ghz 2-tone test 16 18 20 22 24 input power (s.c.l.) (dbm) s.c.l.: single carrier level 25 27 29 31 33 23 21 -55 -45 -35 -25 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency 41 39 40 36 37 38 35 34 6.0 6.2 6.4 6.6 6.8 7.0 7.2 pin=31dbm 25dbm 27dbm 29dbm v ds =10v p 1db frequency (ghz) output power (dbm) output power vs. input power v ds =10v f = 6.4 ghz 24 26 28 30 32 input power (dbm) 40 42 38 36 34 32 30 45 60 15 output power (dbm) add p out add (%)
3 FLM5972-8F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 12 | 100 25 250 scale for |s 21 | 6.0 6.0 5.8 5.8 5.9 5.7ghz 5.7ghz 6.4 6.4 6.5 6.6 6.6 6.7 6.8 6.8 6.9 7.0 7.0 7.1 7.2 7.2 7.3 7.4 7.4 6.3 6.2 6.2 6.1 0.1 0.2 1 2 3 4 6.0 6.0 5.8 5.7ghz 5.7ghz 6.4 6.4 6.6 6.6 6.8 6.8 7.0 7.0 7.2 7.2 7.4 7.4 6.2 6.2 s-parameters v ds = 10v, i ds = 2200ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 5700 .543 -98.0 3.435 -140.7 .071 172.5 .446 -178.5 5800 .566 -119.0 3.366 -157.0 .071 156.9 .416 167.7 5900 .586 -138.3 3.291 -173.2 .071 142.6 .388 153.6 6000 .603 -155.7 3.209 171.2 .070 127.4 .368 139.8 6100 .613 -171.5 3.133 155.8 .069 112.0 .353 125.4 6200 .616 174.1 3.078 140.6 .070 98.4 .344 110.5 6300 .607 160.0 3.047 125.5 .070 83.7 .342 95.4 6400 .583 146.1 3.039 110.3 .071 69.9 .349 79.5 6500 .551 131.7 3.049 94.1 .073 55.3 .362 63.5 6600 .503 116.7 3.088 78.0 .076 39.9 .386 46.9 6700 .438 100.4 3.130 60.7 .078 23.5 .418 30.7 6800 .351 82.5 3.165 42.3 .079 7.3 .455 14.4 6900 .245 62.3 3.182 22.7 .082 -11.7 .496 -1.7 7000 .130 39.9 3.150 5.5 .082 -27.5 .531 -14.2 7100 .029 -98.9 3.037 -16.5 .080 -48.4 .561 -30.1 7200 .175 -166.2 2.839 -38.7 .074 -68.9 .576 -44.8 7300 .328 168.6 2.562 -60.8 .069 -90.0 .577 -58.2 7400 .469 146.1 2.243 -82.4 .059 -110.2 .561 -70.3
4 FLM5972-8F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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